800V CoolMOS짧 P7 Power Transistor

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效率和散热性能的新基准

800V CoolMOS짧 P7 Power Transistor

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20a

800V CoolMOS짧 P7 Power Transistor

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20a

800V CoolMOS짧 P7 Power Device

MOSFET 800V CoolMOSª P7 Power Device The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

800V CoolMOS짧 P7 Power Transistor

文件：995.22 Kbytes Page：13 Pages

800V CoolMOS짧 P7 Power Transistor

文件：1.05773 Mbytes Page：13 Pages