| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchr | MOTOROLA 摩托罗拉 | |||
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms The MPC2104P (256KB) and MPC2105P (512KB) are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. All of these cache m | MOTOROLA 摩托罗拉 | |||
3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM) TA2104BN, TA2104BFN are AM/FM 1 chip tuner ICs, which are designed for portable Radios and 3V Head phone Radios. | TOSHIBA 东芝 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX |
IPS2104芯片相关品牌
IPS2104规格书下载地址
IPS2104参数引脚图相关
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IPS2104数据表相关新闻
IPS1025HFQ 高压侧开关
STMicroelectronics 采用 M0T5 VIPower 技术的单片架构采用了 QFN48L 封装
2022-10-27IPS1011SPBF
原装正品现货
2022-5-18IPW60R041P6原装现货
IPW60R041P6原装正品
2021-8-11IPW60R080P7
IPW60R080P7,全新原装当天发货或门市自取0755-82732291.
2019-9-20IPW60R060P7
IPW60R060P7
2019-7-9IPS0151-完全保护的功率MOSFET开关
IPS0151/IPS0151S得到充分保护三端智能功率MOSFET,具有过电流,超温,防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。 特点 •在温度关机 •在当前的关机 •有源钳位
2012-11-14
DdatasheetPDF页码索引
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