CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies for Server

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.165Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

CoolMOSTM Power Transistor

文件：327.15 Kbytes Page：10 Pages

CoolMOSTM Power Transistor

文件：327.15 Kbytes Page：10 Pages

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.165Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤165mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

CoolMos Power Transistor

文件：611.97 Kbytes Page：10 Pages