600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 17mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK (PG-HDSOP-22-1) offers top side coo

最低的 RDS(on) *采用新型顶部冷却 QDPAK 封装的 600 V SJ MOSFET，非常适合低频开关应用和固态解决方案

600V CoolMOSª SJ S7A Power Device

Features • Optimized for low switching frequency in high-end applications (circuit breakers and diode paralleling/replacement in bridge rectifiers). • S7A technology enables best in class RDS(on) in smallest footprint. • Kelvin Source pin improves switching performance at high current. • QDPA

Infineon’s lowest RDS(on) * A SJ MOSFET in the novel top-side-cooled QDPAK package, ideal for low-frequency switching automotive applications

600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 17mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK bottom side cooling package is MSL1

600V CoolMOSª SJ S7A Power Device

Features • Optimized for low switching frequency in high-end applications (circuit breakers and diode paralleling/replacement in bridge rectifiers). • S7A technology enables best in class RDS(on) in smallest footprint. • Kelvin Source pin improves switching performance at high current. • QDPA