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IPB70N10SL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

ISC

无锡固电

20V-650V汽车级MOSFET

• N-Channel\n • Enhancement mode\n • Logic Level\n • 175°C operating temperature\n • Avalanche rated\n • dv/dt rated\n • Green Package (lead free)\n\n优势:\n• low RDS (on) in trench technology  - down to 4.8 mOhm\n • highest current capability 180A\n • low switching and conduction power losses for hig;

INFINEON

英飞凌

SIPMOS Power-Transistor

文件:125.42 Kbytes Page:8 Pages

INFINEON

英飞凌

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

IPB70N10SL产品属性

  • 类型

    描述

  • RDS (on)(@10V) max:

    16.0mΩ

  • RDS (on) max:

    16.0mΩ

  • RDS (on)(@4.5V LL) max:

    25.0mΩ

  • QG(typical) :

    160.0nC 

  • VDS max:

    100.0V

  • ID  max:

    70.0A

  • RthJC max:

    0.6K/W

  • Ptot max:

    250.0W

  • IDpuls max:

    280.0A

  • VGS(th) min max:

    1.2V 2.0V

更新时间:2026-5-24 19:54:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
25+
PG-TO263-3
25000
原装正品,假一赔十!
Infineon/英飞凌
21+
PG-TO263-3
6820
只做原装,质量保证
INFINEON
24+
PG-TO263-3
8866
Infineon(英飞凌)
2447
PG-TO263-3
115000
1000个/圆盘一级代理专营品牌!原装正品,优势现货,
INFINEON
23+
Trans MOSFET N-CH 100V 70A 3-P
7000
Infineon
原厂封装
9800
原装进口公司现货假一赔百
INENOI
20+
SOT263
14500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon Technologies
21+
PG-TO263-3-2
1000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
INFINEON
23+
TO-263
50000
全新原装正品现货,支持订货
Infineon/英飞凌
24+
PG-TO263-3
6000
全新原装深圳仓库现货有单必成

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