| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB70N10SL | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv | ISC 无锡固电 | ||
20V-650V汽车级MOSFET • N-Channel\n • Enhancement mode\n • Logic Level\n • 175°C operating temperature\n • Avalanche rated\n • dv/dt rated\n • Green Package (lead free)\n\n优势:\n• low RDS (on) in trench technology - down to 4.8 mOhm\n • highest current capability 180A\n • low switching and conduction power losses for hig; | INFINEON 英飞凌 | |||
SIPMOS Power-Transistor 文件:125.42 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 |
IPB70N10SL产品属性
- 类型
描述
- RDS (on)(@10V) max:
16.0mΩ
- RDS (on) max:
16.0mΩ
- RDS (on)(@4.5V LL) max:
25.0mΩ
- QG(typical) :
160.0nC
- VDS max:
100.0V
- ID max:
70.0A
- RthJC max:
0.6K/W
- Ptot max:
250.0W
- IDpuls max:
280.0A
- VGS(th) min max:
1.2V 2.0V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
25+ |
PG-TO263-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON |
24+ |
PG-TO263-3 |
8866 |
||||
Infineon(英飞凌) |
2447 |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
INFINEON |
23+ |
Trans MOSFET N-CH 100V 70A 3-P |
7000 |
||||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INENOI |
20+ |
SOT263 |
14500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon Technologies |
21+ |
PG-TO263-3-2 |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
INFINEON |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon/英飞凌 |
24+ |
PG-TO263-3 |
6000 |
全新原装深圳仓库现货有单必成 |
IPB70N10SL芯片相关品牌
IPB70N10SL规格书下载地址
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DdatasheetPDF页码索引
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