型号 功能描述 生产厂家 企业 LOGO 操作
IPB60R280P6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

Infineon

英飞凌

IPB60R280P6

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263(D2PAK) packaging • Ultra-fast body diode • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching application

ISC

无锡固电

IPB60R280P6

Material Content Data Sheet

文件:33.27 Kbytes Page:1 Pages

Infineon

英飞凌

IPB60R280P6

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

Material Content Data Sheet

文件:33.27 Kbytes Page:1 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.28Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust de

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • Fast switching ​​​​​​​ • FEATURES • Static drain-source on-resistance: RDS(on)≤280mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

ISC

无锡固电

更新时间:2025-12-15 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
50
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON/英飞凌
25+
PG-TO263-3
32360
INFINEON/英飞凌全新特价IPB60R280P6即刻询购立享优惠#长期有货
INFINEON/英飞凌
21+
TO263
1574
INFINEON/英飞凌
2450+
PG-TO263-3
9850
只做原装正品现货或订货假一赔十!
Infineon
原厂封装
9800
原装进口公司现货假一赔百
Infineon/英飞凌
24+
PG-TO263-3
25000
原装正品,假一赔十!
Infineon/英飞凌
21+
PG-TO263-3
6820
只做原装,质量保证
INFINEON
24+
TO-263
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINE0N
21+
PG-TO263-3
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
Infineon(英飞凌)
24+
TO-263
8498
支持大陆交货,美金交易。原装现货库存。

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