Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineons CoolMOS™ P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. ·Reduced gate charge (Q g)\n ·Higher V th\n ·Good body diode ruggedness\n ·Optimized integrated R g\n ·Improved dv/dt from 50V/ns\n ·CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology;

Material Content Data Sheet

文件：33.27 Kbytes Page：1 Pages

Material Content Data Sheet

文件：33.27 Kbytes Page：1 Pages

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤230mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

Metal Oxide Semiconductor Field Effect Transistor

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