位置：首页 > IC中文资料 > IPB022N12NM6
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB022N12NM6 | MOSFET OptiMOSTM 6 Power-Transistor, 120 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification • | Infineon 英飞凌 |   | |
IPB022N12NM6 | OptiMOS ™ 6 功率 MOSFET，正常电平 120 V，采用 D²PAK 3 引脚封装 | Infineon 英飞凌 | | |
MOSFET OptiMOSTM 6 Power-Transistor, 120 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification • | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO263 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
18500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
1110+ |
TO263 |
366 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
INFINEON |
24+ |
TO263 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON |
24+ |
D2PAK(TO-263) |
8866 |
||||
Infineon |
23+ |
PG-TO263-3 |
15500 |
英飞凌优势渠道全系列在售 |
|||
INF |
23+ |
TO263 |
5000 |
原装正品,假一罚十 |
|||
INFINEON/英飞凌 |
2447 |
SOT263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
IPB022N12NM6芯片相关品牌
IPB022N12NM6规格书下载地址
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DdatasheetPDF页码索引
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