High efficiency through the use of piezo transformer

FEATURES ¨ High efficiency through the use of piezo transformer ¨ Very small, very thin and low power consumption design ¨ Suitable for low power consumption CFL from 0.6W to 2.0W ¨ External On/Off switching of backlight ¨ Dimmable from 100 down to 30 percent

High efficiency through the use of piezo transformer

FEATURES\n¨  High efficiency through the use of piezo transformer\n¨  Very small, very thin and low power consumption design\n¨  Suitable for low power consumption CFL from 0.6W to 2.0W\n¨  External On/Off switching of backlight\n¨  Dimmable from 100 down to 30 percent ¨  High efficiency through the use of piezo transformer\n¨  Very small, very thin and low power consumption design\n¨  Suitable for low power consumption CFL from 0.6W to 2.0W\n¨  External On/Off switching of backlight\n¨  Dimmable from 100 down to 30 percent;

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. FEATURES •

UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the