INA121价格

参考价格:¥31.3022

型号:INA121P 品牌:TI 备注:这里有INA121多少钱,2025年最近7天走势,今日出价,今日竞价,INA121批发/采购报价,INA121行情走势销售排行榜,INA121报价。
型号 功能描述 生产厂家 企业 LOGO 操作
INA121

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

INA121

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:220.25 Kbytes Page:12 Pages

BURR-BROWN

INA121

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

INA121

FET 输入低功耗仪表放大器

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:220.25 Kbytes Page:12 Pages

BURR-BROWN

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:220.25 Kbytes Page:12 Pages

BURR-BROWN

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:220.25 Kbytes Page:12 Pages

BURR-BROWN

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:220.25 Kbytes Page:12 Pages

BURR-BROWN

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件:884.48 Kbytes Page:20 Pages

TI

德州仪器

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Riedon

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

Temperature Sensors Line Guide

文件:736.09 Kbytes Page:11 Pages

Honeywell

霍尼韦尔

Precision Wirewound Resistors

文件:318.25 Kbytes Page:2 Pages

Riedon

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN

文件:113.41 Kbytes Page:1 Pages

WITTEN

INA121产品属性

  • 类型

    描述

  • 型号

    INA121

  • 制造商

    BB

  • 制造商全称

    BB

  • 功能描述

    FET-Input, Low Power INSTRUMENTATION AMPLIFIER

更新时间:2025-11-19 20:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
25+
SOP8
12496
TI/德州仪器原装正品INA121U即刻询购立享优惠#长期有货
TI/德州仪器
100000
代理渠道/只做原装/可含税
TI
23+
N/A
560
原厂原装
TI
22+
SOP8
21450
原装正品,实单请联系
BB
21+
DIP8
1709
TI/德州仪器
25+
SOP-8_150mil
4987
强势库存!绝对原装公司现货!
BB
24+
DIP8
90000
一级代理商进口原装现货、价格合理
BB
22+
DIP-8
5000
只做原装鄙视假货15118075546
BB
2023+
DIP8
50000
原装现货
TI/德州仪器
22+
SOP-8_150mil
500000
原装现货支持实单价优/含税

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