4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

IN24LC08

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

IN24LC08

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

IN24LC08

8K-Bit Serial EEPROM

OVERVIEW The 24LC08 serial EEPROM has a 8,192-bit (1,024-byte) capacity, supporting the standard I2C™-bus serial interface. It is fabricated using CERAMATEs most advanced CMOS technology. One of its major feature ’ is a hardware-based write protection circuit for the entire memory area. Hardware-

4K/8K 2.5V I 2 C Serial EEPROMs

Description: The Microchip Technology Inc. 24CXX, 24LCXX, 24AAXX and 24FCXX (24XX*) devices are a family of 128-bit through 512 Kbit Electrically Erased PROMs. The devices are organized in blocks of x8-bit memory with 2-wire serial interfaces. Low-voltage design permits operation down to 1.7V (fo

8K IC SERIAL EEPROM

Description: The Microchip Technology Inc. 24CXX, 24LCXX, 24AAXX and 24FCXX (24XX*) devices are a family of 128-bit through 512 Kbit Electrically Erased PROMs. The devices are organized in blocks of x8-bit memory with 2-wire serial interfaces. Low-voltage design permits operation down to 1.7V (fo

3-Wire Serial EEPROMs

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8K I2C??Serial EEPROM

文件：553.9 Kbytes Page：30 Pages