2K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC02B is a 2K-bit Electrically Erasable PROM. The device is organized as a single block of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5volts with standby and active currents of only 5µA and 1mA respectively. The IN24LC02B

2K 2.5V CMOS Serial EEPROMs

1K/2K 2-Wire CMOS Serial EEPROM

General Description The HT24LC01/02 is a 1K/2K-bit serial read/write non-volatile memory device using the CMOS floating gate process. Its 1024/2048 bits of memory are organized into 128/256 words and each word is 8 bits. The device is optimized for use in many industrial and commercial applicat

1K/2K I 2 C ??Serial EEPROMs in ISO Micromodules

Description: The Microchip Technology Inc. 24AA01/24LC01B (24XX01*) is a 1 Kbit Electrically Erasable PROM. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 μA an

1K/2K I 2 C ??Serial EEPROMs in ISO Micromodules

Description: The Microchip Technology Inc. 24AA01/24LC01B (24XX01*) is a 1 Kbit Electrically Erasable PROM. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 μA an

2K I2C Serial EEPROM

Description The Microchip Technology Inc. 24AA02/24LC02B (24XX02*) is a 2 Kbit Electrically Erasable PROM. The device is organized as one block of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.8V, with standby and active currents of only 1 µA

1K/2K 2-Wire CMOS Serial EEPROM

General Description The HT24LC01/02 is a 1K/2K-bit serial read/write non-volatile memory device using the CMOS floating gate process. Its 1024/2048 bits of memory are organized into 128/256 words and each word is 8 bits. The device is optimized for use in many industrial and commercial applicat