位置：首页 > IC中文资料 > IMZA65R039M1H
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IMZA65R039M1H | 650 V CoolSiC짧 M1 SiC Trench Power Device 文件：1.43304 Mbytes Page：15 Pages | Infineon 英飞凌 |   | |
IMZA65R039M1H | CoolSiC ™ MOSFET 650V – SiC MOSFET 采用 TO247 4 引脚封装，性能可靠且经济高效 | Infineon 英飞凌 | | |
MOSFET 650 V CoolSiCª M1 SiC Trench Power Device Features • Optimized switching behavior at higher currents • Commutation robust fast body diode with low Qf • Superior gate oxide reliability • Tj,max=175°C and excellent thermal behavior • Lower RDS(on) and pulse current dependency on temperature • Increased avalanche capability • Compatib | Infineon 英飞凌 | | ||
650 V CoolSiC짧 M1 SiC Trench Power Device 文件：1.58276 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
650 V CoolSiC짧 M1 SiC Trench Power Device 文件：1.41925 Mbytes Page：15 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
23+ |
PG-TO247-4 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-4-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-TO247-4-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON |
23+ |
K-B |
12240 |
只有原装,请来电咨询 |
|||
Infineon |
24+ |
PG-TO247-4 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
Infineon/英飞凌 |
2021+ |
PG-TO247-4-3 |
9600 |
原装现货，欢迎询价 |
|||
Infineon Technologies |
23+ |
TO-247-4 |
3652 |
原厂正品现货供应SIC全系列 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-4-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON |
21+ |
SMD |
5236 |
十年信誉,只做原装,有挂就有现货! |
|||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271699邹小姐 |
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IMZA65R039M1H规格书下载地址
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IMZA65R039M1H数据表相关新闻
IMX334LQR-C LGA SONY 原装正品 品质保证
原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-4-26IMX335LQN-C LGA SONY 原装正品 品质保证
原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-4-26IN5822
IN5822，当天发货0755-82732291全新原装现货或门市自取.
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2020-1-12
DdatasheetPDF页码索引
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