位置：首页 > IC中文资料 > IMZA65R026M2H
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IMZA65R026M2H | SiC MOSFET CoolSiC™ MOSFET 650 V G2 Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • | Infineon 英飞凌 |   | |
CoolSiC™ MOSFET 650 V G2 Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • | Infineon 英飞凌 | | ||
SiC MOSFET CoolSiC™ MOSFET 650 V G2 Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • | Infineon 英飞凌 | | ||
CoolSiC™ MOSFET 650 V G2 Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • | Infineon 英飞凌 | | ||
SiC MOSFET CoolSiC™ MOSFET 650 V G2 Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • | Infineon 英飞凌 | | ||
SiC MOSFET CoolSiC™ MOSFET 650 V G2 Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
TO-247-3 |
5000 |
全新原装正品,现货销售 |
|||
Infineon(英飞凌) |
2447 |
PG-TO247-4-3 |
115000 |
240个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
INFINEON |
23+ |
GOOP |
8000 |
只做原装现货 |
|||
Infineon |
23+ |
PG-TO247-4 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-4-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon(英飞凌) |
2324+ |
NA |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
|||
Infineon(英飞凌) |
2511 |
PG-TO247-4-3 |
8484 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-4-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
INFINEON |
22+23+ |
TO-247-3 |
8000 |
新到现货，只做原装进口 |
|||
Infineon Technologies |
23+ |
TO-247-3 |
3652 |
原厂正品现货供应SIC全系列 |
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IMZA65R026M2H规格书下载地址
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IMZA65R026M2H数据表相关新闻
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原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
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DdatasheetPDF页码索引
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