CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

文件：1.27998 Mbytes Page：17 Pages

CoolSiC™1200VSiCTrenchMOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=69AatTC=25°C •RDS(on)=30mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswitc

CoolSiC™1200VSiCTrenchMOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=69AatTC=25°C •RDS(on)=30mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswitc

EiceDRIVER™1ED314xMU12F(1ED-X3Compact)

Features •Single-channelisolatedgatedriver •Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs •Upto6.5Atypicalpeakoutputcurrent •45nspropagationdelaywith7nspart-to-partmatching(skew) •35Vabsolutemaximumoutputsupplyvoltage •Highcommon-mode

CoolSiC??1200VSiCTrenchMOSFETwith.XTinterconnectiontechnology

文件：1.26252 Mbytes Page：17 Pages

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

文件：1.18024 Mbytes Page：17 Pages