CMOS Image Sensors with 3.45 μm and 6.9 μm Pixels and Global Shutter Function for Industrial and Sensing Applications ustrial

■ Global shutter function ■ High frame rate ■ A variety of functions (external trigger mode, multiple exposure function, ROI mode, multiple image sensor synchronization function, etc.) ■ Compact device size (14 mm × 14 mm) ■ Expanded lineup (3.45 μm pixel and 6.9 μm pixel, Sub LVDS, MIPI inte

CMOS Image Sensor

Customer Specification

Construction Diameters (In) 1) Component 1 1 X 1 BUSBAR a) Conductor 18 (SOLID) AWG Tinned Copper 0.040 Applicable Specifications 1) Other ASTM-B33 CID AA59551S18S1T

Customer Specification

Construction 1) Component 1 1 X 1 BUSBAR a) Conductor 18 (SOLID) AWG Tinned Copper 0.040

Commercial 12mm Diameter Composition Variable Resistors

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USING THE Si3400 AND Si3401 POE PD CONTROLLERS IN ISOLATED AND NON-ISOLATED DESIGNS

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N-Channel 100-V (D-S) MOSFET

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