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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IMW65R048M1H | 650 V CoolSiC짧 M1 SiC Trench Power Device 文件：1.47512 Mbytes Page：15 Pages | Infineon 英飞凌 |   | |
IMW65R048M1H | CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package | Infineon 英飞凌 | | |
包装：管件 描述：MOSFET 650V NCH SIC TRENCH 分立半导体产品 晶体管 - FET，MOSFET - 单个 | Infineon 英飞凌 | | ||
MOSFET 650 V CoolSiCª M1 SiC Trench Power Device Features • Optimized switching behavior at higher currents • Commutation robust fast body diode with low Qf • Superior gate oxide reliability • Tj,max=175°C and excellent thermal behavior • Lower RDS(on) and pulse current dependency on temperature • Increased avalanche capability • Compatib | Infineon 英飞凌 | | ||
650 V CoolSiC짧 M1 SiC Trench Power Device 文件：1.59553 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
650 V CoolSiC짧 M1 SiC Trench Power Device 文件：1.48925 Mbytes Page：15 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
TO-247 |
19850 |
原装正品,假一赔十 |
|||
Infineon(英飞凌) |
23+ |
TO-247-3 |
10000 |
只做全新原装,实单来 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
8000 |
只做原装，欢迎询价，量大价优 |
|||
Infineon/英飞凌 |
25 |
PG-TO247-3 |
6000 |
原装正品 |
|||
INFINEON |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
Infineon/英飞凌 |
2021+ |
PG-TO247-3 |
9600 |
原装现货，欢迎询价 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon(英飞凌) |
24+ |
TO-247 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
|||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271686邹小姐 |
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IMW65R048M1H规格书下载地址
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IMW65R048M1H数据表相关新闻
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原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-23
DdatasheetPDF页码索引
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