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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IMBG65R057M1H | 650 V CoolSiC짧 M1 SiC Trench Power Device 文件：1.56363 Mbytes Page：15 Pages | Infineon 英飞凌 |   | |
IMBG65R057M1H | 采用紧凑型 SMD 封装的 SiC MOSFET | Infineon 英飞凌 | | |
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SILICON CARBIDE MOSFET PG-TO263- 分立半导体产品 晶体管 - FET，MOSFET - 单个 | Infineon 英飞凌 | | ||
MOSFET 650 V CoolSiCª M1 SiC Trench Power Device Features • Optimized switching behavior at higher currents • Commutation robust fast body diode with low Qf • Superior gate oxide reliability • Tj,max=175°C and excellent thermal behavior • Lower RDS(on) and pulse current dependency on temperature • Increased avalanche capability • Compatib | Infineon 英飞凌 | | ||
650 V CoolSiC짧 M1 SiC Trench Power Device 文件：1.37815 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
650 V CoolSiC짧 M1 SiC Trench Power Device 文件：1.39359 Mbytes Page：15 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
20+ |
- |
1000 |
||||
N/A |
24+ |
N/A |
14825 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
Infineon |
23+ |
PG-TO263-7 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon(英飞凌) |
24+ |
- |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Infineon |
24+ |
PG-TO263-7 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
INFINEON |
25+ |
原封装 |
51220 |
郑重承诺只做原装进口货 |
|||
INFINEON |
23+ |
10000 |
原装正品现货,德为本,正为先,通天下! |
||||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
Infineon(英飞凌) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
INFINEON |
2 |
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IMBG65R057M1H规格书下载地址
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DdatasheetPDF页码索引
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