位置：首页 > IC中文资料 > IMBF170R650M1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IMBF170R650M1 | CoolSiC??1700V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.27879 Mbytes Page：16 Pages | Infineon 英飞凌 |   | |
IMBF170R650M1 | CoolSiC ™ 1700 V SiC 沟槽MOSFET，采用TO-263-7封装 | Infineon 英飞凌 | | |
CoolSiC™ 1700 V SiC Trench MOSFET Features • VDSS = 1700 V at Tvj = 25°C • IDDC = 7.5 A at TC = 25°C • RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C • Optimized for fly-back topologies • 12 V / 0 V gate-source voltage compatible with most fly-back controllers • Very low switching losses • Benchmark gate threshold voltage, VGS( | Infineon 英飞凌 | |
更新时间：2025-12-30 12:28:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
25650 |
新到现货,只做原装进口 |
||||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon(英飞凌) |
2511 |
9550 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
25048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
Infineon Technologies |
23+ |
TO-263-7 |
3652 |
原厂正品现货供应SIC全系列 |
|||
Infineon |
24+ |
PG-TO263-7 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Infineon |
23+ |
PG-TO263-7 |
15500 |
英飞凌优势渠道全系列在售 |
|||
INFINEON |
23+ |
N/A |
8000 |
只做原装现货 |
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