| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IMBF170R650M1 | 丝印代码：170M1650；CoolSiC??1700V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.27879 Mbytes Page：16 Pages | INFINEON 英飞凌 |   | |
IMBF170R650M1 | CoolSiC ™ 1700 V SiC 沟槽MOSFET，采用TO-263-7封装 | INFINEON 英飞凌 | | |
丝印代码：170M1650；CoolSiC™ 1700 V SiC Trench MOSFET Features • VDSS = 1700 V at Tvj = 25°C • IDDC = 7.5 A at TC = 25°C • RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C • Optimized for fly-back topologies • 12 V / 0 V gate-source voltage compatible with most fly-back controllers • Very low switching losses • Benchmark gate threshold voltage, VGS( | INFINEON 英飞凌 | |
更新时间：2026-3-18 23:00:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
25048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON/英飞凌 |
1949 |
1000 |
原装现货支持BOM配单服务 |
||||
Infineon(英飞凌) |
25+ |
N/A |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
||||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
Infineon |
25+ |
PG-TO263-7 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon |
25+ |
PG-TO263-7 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
INFINEON |
22+ |
TO263-7 |
7919 |
全新 发货1-2天 |
|||
Infineon(英飞凌) |
23+ |
25650 |
新到现货,只做原装进口 |
||||
INFINEON |
23+ |
N/A |
7000 |
IMBF170R650M1芯片相关品牌
IMBF170R650M1规格书下载地址
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