PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

DESCRIPTION The IL215A/216A/217A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL2

PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

DESCRIPTION\nThe IL215A/216A/217A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215 • High Current Transfer Ratio, IF=1 mA\n   IL215A—20% Minimum\n   IL216A—50% Minimum\n   IL217A—100% Minimum\n• Isolation Voltage, 2500 VACRMS\n• Electrical Specifications Similar to\n   Standard 6 Pin Coupler\n• Industry Standard SOIC-8 Surface\n   Mountable Package\n• Standard Lead Spa;

PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

DESCRIPTION The IL215AT/216AT/217AT is an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrica isolation between input and output. The

Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 Package

High current transfer ratio\nIsolation test voltage, 4000 VRMS\nIndustry standard SOIC-8 surface mountable package;

High current transfer ratio

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Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 package

UHF variable capacitance diode

DESCRIPTION The BB215 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD80 glass SMD package. FEATURES • Excellent linearity • Matched to 3 • Small hermetically sealed glass SMD package • C28: 2 pF; ratio: 8.3 • Low series resistance. APPLICATIONS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

Small Outline Optoisolators Transistor Output (Low Input Current) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high densi

Silicon NPN Transistor Darlington Driver

Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic