High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 50 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

1200 V、50 A IGBT，带反并联二极管，采用 TO-247 3 引脚封装

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 50 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 50 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.15V@IC=50A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial UPS · String inverter · Welding

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 50 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w