IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.1V@IC=40A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

650V DuoPack IGBT and diode High speed switching series fifth generation

文件：2.56662 Mbytes Page：18 Pages

650V DuoPack IGBT and Diode High speed switching series fifth generation

文件：2.74034 Mbytes Page：18 Pages

采用 TO-247 封装、带反并联二极管的 650 V IGBT

High speed switching series fifth generation

High speed switching series fifth generation

文件：1.98924 Mbytes Page：16 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 650V 74A 255W PG-TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：管件 描述：IGBT 650V 74A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High speed IGBT in TRENCHSTOPTM 5 technology

Features and Benefits: High speed H5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • Plug and play replacement of previous generation IGBTs • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress te

BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)

Features n 650 V, 40 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Novel trench-gate field-stop technology n Optimized for conduction n High-speed switching n Maximum operating Tj = 175 °C n RoHS compliant* Applications n Switched-Mode Power Supplies (SMPS) n Uninterruptible

High speed fast IGBT in TRENCHSTOPTM 5 technology

文件：1.79311 Mbytes Page：14 Pages

650V IGBT high speed switching series fifth generation

文件：2.30811 Mbytes Page：15 Pages

High speed 5 IGBT in TRENCHSTOP 5 technology

文件：2.48832 Mbytes Page：15 Pages