650V DuoPack IGBT and Diode High speed switching series fifth generation

High speed 5 IGBT in TRENCHSTOP™ 5 technology copacked with RAPID 1 fast and soft anti parallel diode Features and Benefits: High speed H5 technology offering • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low QG • IGBT copacked with RAPID

650V DuoPack IGBT and Diode High speed switching series fifth generation

文件：2.47228 Mbytes Page：18 Pages

650V DuoPack IGBT and Diode High speed switching series fifth generation

文件：2.47228 Mbytes Page：18 Pages

IGBT copacked with RAPID 1 fast and soft antiparallel diode

文件：1.98575 Mbytes Page：16 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 650V 74A 255W PG-TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT 650V 74A 255W PG-TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High speed FAST IGBT in TRENCHSTOPTM 5 technology

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Green package (

High speed FAST IGBT in TRENCHSTOPTM 5 F5 technology

Features and Benefits: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Pb-free lead plating; RoHS compliant • Innovative

High speed fast IGBT in TRENCHSTOPTM 5 technology

文件：1.80213 Mbytes Page：14 Pages

High speed 5 FAST IGBT in TRENCHSTOP 5 technology

文件：2.49694 Mbytes Page：15 Pages

650V IGBT high speed switching series fifth generation

文件：2.30767 Mbytes Page：15 Pages