IKW30N60T价格

参考价格:¥14.9168

型号:IKW30N60T 品牌:Infineon 备注:这里有IKW30N60T多少钱,2025年最近7天走势,今日出价,今日竞价,IKW30N60T批发/采购报价,IKW30N60T行情走势销售排行榜,IKW30N60T报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IKW30N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterruptible Power

Infineon

英飞凌

IKW30N60T

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件:506.16 Kbytes Page:13 Pages

Infineon

英飞凌

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件:506.16 Kbytes Page:13 Pages

Infineon

英飞凌

Designed for DC/AC converters for Automotive Application

文件:671.46 Kbytes Page:14 Pages

Infineon

英飞凌

封装/外壳:TO-247-3 包装:管件 描述:IGBT TRENCH/FS 600V 60A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件:506.16 Kbytes Page:13 Pages

Infineon

英飞凌

封装/外壳:TO-247-3 包装:管件 描述:IGBT TRENCH/FS 600V 60A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Bourns

伯恩斯

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

文件:1.9827 Mbytes Page:16 Pages

Infineon

英飞凌

ACTIVE / SYNCHRONOUS RECTIFIER

文件:672.35 Kbytes Page:15 Pages

DIODES

美台半导体

N-Channel Enhancement Mode MOSFET

文件:281.61 Kbytes Page:4 Pages

DACO

N-Channel Enhancement Mode MOSFET

文件:264.01 Kbytes Page:4 Pages

DACO

IKW30N60T产品属性

  • 类型

    描述

  • 型号

    IKW30N60T

  • 功能描述

    IGBT 晶体管 LOW LOSS DuoPack 600V 30A

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-9 9:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
TO-247
45000
INFINEON/英飞凌全新现货IKW30N60T即刻询购立享优惠#长期有排单订
INFINEON
N/A
主营模块
190
原装正品,现货供应
Infineon(英飞凌)
2023+
TO-247AC
4550
全新原装正品
INFINEON
24+
TO-247
65200
一级代理/放心采购
INFINEON
23+
TO-247
3000
原装正品假一罚百!可开增票!
INFINEON/英飞凌
23+
TO247
50000
全新原装正品现货,支持订货
Infineon/英飞凌
24+
TO-247(AC)
6000
全新原装深圳仓库现货有单必成
INFINEON原装正品专卖
23+
TO-247
33000
专注原装正品现货特价中量大可定
INFINEON原装
ROHS全新原装
TO-247
21870
原装进口价格好实需详询QQ
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网

IKW30N60T数据表相关新闻