Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterruptible Power

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：506.16 Kbytes Page：13 Pages

分立式IGBT

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：506.16 Kbytes Page：13 Pages

Designed for DC/AC converters for Automotive Application

文件：671.46 Kbytes Page：14 Pages

Designed for DC/AC converters for Automotive Application

封装/外壳：TO-247-3 包装：管件 描述：IGBT TRENCH/FS 600V 60A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：管件 描述：IGBT TRENCH/FS 600V 60A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：506.16 Kbytes Page：13 Pages

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

文件：1.9827 Mbytes Page：16 Pages

ACTIVE / SYNCHRONOUS RECTIFIER

文件：672.35 Kbytes Page：15 Pages

N-Channel Enhancement Mode MOSFET

文件：281.61 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：264.01 Kbytes Page：4 Pages