位置：首页 > IC中文资料第940页 > IKW30N60H3XK
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT) General Information The Bourns® Model BIDNW30N60H3 IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic character | Bourns 伯恩斯 |   | ||
High speed switching series third generation TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant | Infineon 英飞凌 | | ||
High speed switching series third generation 文件：1.62111 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
600V high speed switching series third generation 文件：1.63937 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
600V high speed switching series third generation 文件：1.45972 Mbytes Page：14 Pages | Infineon 英飞凌 | |
IKW30N60H3XK产品属性
- 类型
描述
- 型号
IKW30N60H3XK
- 制造商
Infineon Technologies AG
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
PG-TO220-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-TO220-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON |
24+ |
TO-220 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
41 |
全新原装正品支持含税 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
20 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
IKW30N60H3XK规格书下载地址
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IKW30N60H3XK数据表相关新闻
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IKW30N60T ，当天发货0755-82732291全新原装现货或门市自取.
2020-10-26IKW15N120H3
IKW15N120H3?，全新原装当天发货或门市自取0755-82732291.
2020-4-22
DdatasheetPDF页码索引
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