High speed Duopack : IGBT in Trench and Fieldstop technology

Features: TRENCHSTOP™ technology offering • very low VCEsat • low EMI • Very soft, fast recovery anti-parallel diode • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Mod

IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

文件：2.19193 Mbytes Page：16 Pages

IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

文件：2.19193 Mbytes Page：16 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 187W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDNW30N60H3 IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic character

High speed switching series third generation

TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant

High speed switching series third generation

文件：1.62111 Mbytes Page：15 Pages

600V high speed switching series third generation

文件：1.63937 Mbytes Page：14 Pages

600V high speed switching series third generation

文件：1.45972 Mbytes Page：14 Pages