TRENCHSTOP SERIES

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D • Short circuit withstand time – 10µs • Designed for : - Frequency Converters - Uninterrupted Power

Low Loss DuoPack : IGBT in TrenchStop짰 and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

文件：374.05 Kbytes Page：16 Pages

Low Loss DuoPack : IGBT in TrenchStop짰 and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

文件：374.05 Kbytes Page：16 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 50A 190W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.4V@IC=25A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=25A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

IGBT - Power, Single, N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.38 V, 25 A

Description Using the novel field stop 7th generation IGBT technology in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Effic

IGBT - Power, Co-PAK, N-Channel, Field Stop VII, (FS7), SCR, Power TO247-3L 1200 V, 1.38 V, 25 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

1200 V, 25 A Field Stop Trench IGBT

文件：308.64 Kbytes Page：9 Pages