IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterrupted Power S

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

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IGBT in TrenchStop짰 and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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Designed for DC/AC converters for Automotive Application

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode • Automotive AEC Q101 qualified • Designed for DC/AC converters for Automotive Application • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 40A 166W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：管件 描述：IGBT TRENCH/FS 600V 40A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

Fast Switching

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N-Channel 650-V (D-S) Super Junction MOSFET

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20A 600V N-channel enhanced field effect transistor

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