High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 75 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode

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分立式IGBT

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 150A TO247-3-46 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT 单管

High Voltage IGBT

DESCRIPTION ·Space savings ·High Power Density ·Low Switching Losses APPLICATIONS ·DC servo and robot drives ·DC choppers ·UPS ·AC motor speed control

High Voltage IGBT

Short Circuit SOA Capability Square RBSOA Features ● NPT IGBT technology ● low saturation voltage ● low switching losses ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● International sta

Field Stop Trench IGBT

Features •1200V Field Stop Trench IGBT Technology •Low Conduction Loss •Positive Temperature Coefficient •Easy Parallel Operation •Short Circuit Withstanding Time 5 μ s •RoHS Compliant •JEDEC Qualification Applications Inverter, Solar, UPS, Welder

High Voltage IGBT

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