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IKP40N65F5价格
参考价格：￥14.4802
型号：IKP40N65F5XKSA1 品牌：Infineon 备注：这里有IKP40N65F5多少钱，2025年最近7天走势，今日出价，今日竞价，IKP40N65F5批发/采购报价，IKP40N65F5行情走势销售排行榜，IKP40N65F5报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IKP40N65F5 | 650V DuoPack IGBT and Diode High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOP™ 5 technology copacked with RAPID 1 fast and soft anti parallel diode Features and Benefits: High speed H5 technology offering • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low QG • IGBT copacked with RAPID | Infineon 英飞凌 |   | |
IKP40N65F5 | 650V DuoPack IGBT and Diode High speed switching series fifth generation 文件：2.47228 Mbytes Page：18 Pages | Infineon 英飞凌 | | |
IKP40N65F5 | 分立式IGBT | Infineon 英飞凌 | | |
封装/外壳：TO-220-3 包装：管件 描述：IGBT 650V 74A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
High speed FAST IGBT in TRENCHSTOPTM 5 technology Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Green package ( | Infineon 英飞凌 | | ||
High speed FAST IGBT in TRENCHSTOPTM 5 F5 technology Features and Benefits: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Pb-free lead plating; RoHS compliant • Innovative | Infineon 英飞凌 | | ||
High speed fast IGBT in TRENCHSTOPTM 5 technology 文件：1.80213 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
650V IGBT high speed switching series fifth generation 文件：2.30767 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
High speed 5 FAST IGBT in TRENCHSTOP 5 technology 文件：2.49694 Mbytes Page：15 Pages | Infineon 英飞凌 | |
IKP40N65F5产品属性
- 类型
描述
- 型号
IKP40N65F5
- 功能描述
IGBT 晶体管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
PG-TO220-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-TO220-3 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
Infineon/英飞凌 |
2021+ |
PG-TO220-3 |
9600 |
原装现货，欢迎询价 |
|||
Infineon |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
Infineon/英飞凌 |
24+ |
PG-TO220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON/英飞凌 |
2022+ |
500 |
6600 |
只做原装,假一罚十,长期供货。 |
|||
Infineon/英飞凌 |
24+ |
PG-TO220-3 |
8000 |
只做原装，欢迎询价，量大价优 |
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IKP40N65F5规格书下载地址
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IKP40N65F5数据表相关新闻
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类别：分离式半导体产品家庭：IGBT - 单路系列：TrenchStop?IGBT 类型：沟道电压 - 集电极发射极击穿（最大）：600VVge， Ic时的最大Vce（开）：2.1V @ 15V，6A电流 - 集电极 (Ic)（最大）：12A功率 - 最大：100W输入类型：标准型安装类型：表面贴装封装/外壳：TO-252-3，DPak（2 引线+接片），SC-63供应商设备封装：PG-TO
2021-10-16IKW30N60T
IKW30N60T ，当天发货0755-82732291全新原装现货或门市自取.
2020-10-26IKW15N120H3
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2020-4-22
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