Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE(sat) 1.5V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time 5s • Designed for : - Frequency Converters

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：516.549 Kbytes Page：13 Pages

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

文件：460.48 Kbytes Page：14 Pages

分立式IGBT

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

文件：460.48 Kbytes Page：14 Pages

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：516.549 Kbytes Page：13 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 30A 130W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

15 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

15A, 600V N-CHANNEL POWER MOSFET

文件：185.37 Kbytes Page：6 Pages

High Switching Speed

文件：49.33 Kbytes Page：2 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.0671 Mbytes Page：9 Pages

CoolMOS Power Transistor

文件：543.38 Kbytes Page：12 Pages