位置：首页 > IC中文资料 > IKP06N60TS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica | Fuji 富士通 |   | ||
Power filed Effect Transistor FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature | JIANGSU 长电科技 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.92413 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.74081 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
长电 |
23+ |
TO-220-3L |
7300 |
专注配单,只做原装进口现货 |
|||
长电 |
25+23+ |
TO-220-3L |
24537 |
绝对原装正品全新进口深圳现货 |
|||
CJ/长电 |
23+ |
TO-220-3L |
300000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CJ/长电 |
24+ |
TO-220-3L |
50000 |
只做原装，欢迎询价，量大价优 |
|||
CJ/长电 |
2022+ |
TO-220 |
50000 |
原厂代理 终端免费提供样品 |
|||
长晶科技 |
21+ |
TO-220-3L |
20 |
全新原装鄙视假货 |
|||
CJ/长电 |
21+ |
TO-220-3L |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
CJ/长电 |
24+ |
TO-220-3L |
50000 |
全新原装,一手货源,全场热卖! |
|||
长电 |
2015 |
TO-220-3L |
10950 |
IKP06N60TS芯片相关品牌
IKP06N60TS规格书下载地址
IKP06N60TS参数引脚图相关
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IKP06N60TS数据表相关新闻
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类别：分离式半导体产品家庭：IGBT - 单路系列：TrenchStop?IGBT 类型：沟道电压 - 集电极发射极击穿（最大）：600VVge， Ic时的最大Vce（开）：2.1V @ 15V，6A电流 - 集电极 (Ic)（最大）：12A功率 - 最大：100W输入类型：标准型安装类型：表面贴装封装/外壳：TO-252-3，DPak（2 引线+接片），SC-63供应商设备封装：PG-TO
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DdatasheetPDF页码索引
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