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IKB03N120H2价格
参考价格：￥7.9341
型号：IKB03N120H2 品牌：INF 备注：这里有IKB03N120H2多少钱，2025年最近7天走势，今日出价，今日竞价，IKB03N120H2批发/采购报价，IKB03N120H2行情走势销售排行榜，IKB03N120H2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IKB03N120H2 | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for: - SMPS - Lamp Ballast - ZVS-Converter • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution | Infineon 英飞凌 |   | |
IKB03N120H2 | IGBT DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.8V@IC=3A ·Temperature Stable Behavior ·Parallel Switching Capability APPLICATIONS ·Designed for frequency inverters for washingmachines, pumps,fans and vacuum cleaners | ISC 无锡固电 | | |
IKB03N120H2 | 分立式IGBT | Infineon 英飞凌 | | |
HighSpeed 2-Technology • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga | Infineon 英飞凌 | | ||
HighSpeed 2-Technology HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior | Infineon 英飞凌 | | ||
HighSpeed 2-Technology HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior | Infineon 英飞凌 | | ||
HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight para | Infineon 英飞凌 | | ||
HighSpeed 2-Technology 文件：346.62 Kbytes Page：13 Pages | Infineon 英飞凌 | |
IKB03N120H2产品属性
- 类型
描述
- 型号
IKB03N120H2
- 功能描述
IGBT 晶体管 HIGH SPEED 2 TECH 1200V 3A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-263 |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
INFINEON |
23+ |
3A,1200V |
20000 |
全新原装假一赔十 |
|||
Infineon |
08+ |
TO-263 |
2100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
15000 |
英飞凌MOS管、IGBT大量有货 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon/英飞凌 |
23+ |
PG-TO263-3-2 |
12700 |
买原装认准中赛美 |
|||
Infineon/英飞凌 |
24+ |
PG-TO263-3-2 |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
24+ |
TO-220 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON |
2025+ |
TO-263 |
3565 |
全新原厂原装产品、公司现货销售 |
IKB03N120H2规格书下载地址
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制造商零件编号 IHW30N160R2FKSA1 Manufacturer Or OEM Infineon Technologies 描述 IGBT 1600V 60A 312W TO247-3 说明 IGBT NPT，沟槽型场截止 1600V 60A 312W 通孔 PG-TO247-3 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 240 标准包装
2020-12-14
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