位置：首页 > IC中文资料第9921页 > IKB01N120H2
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IKB01N120H2 | HighSpeed2-Technologywithsoft,fastrecoveryanti-parallelEmConHEdiode 文件：385.62 Kbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
HighSpeed2-Technology HighSpeed2-Technology •Designedfor: -SMPS -LampBallast -ZVS-Converter -optimisedforsoft-switching/resonanttopologies •2ndgenerationHighSpeed-Technologyfor1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HighSpeed2-Technology HighSpeed2-Technology •Designedfor: -SMPS -LampBallast -ZVS-Converter -optimisedforsoft-switching/resonanttopologies •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitching | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HighSpeed2-Technology HighSpeed2-Technology •Designedfor: -SMPS -LampBallast -ZVS-Converter -optimisedforsoft-switching/resonanttopologies •2ndgenerationHighSpeed-Technologyfor1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HighSpeed2-Technology HighSpeed2-Technology •Designedfor: -SMPS -LampBallast -ZVS-Converter -optimisedforsoft-switching/resonanttopologies •2ndgenerationHighSpeed-Technologyfor1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HighSpeed2-Technology 文件：1.18644 Mbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IKB01N120H2产品属性
- 类型
描述
- 型号
IKB01N120H2
- 功能描述
IGBT 晶体管 HIGH SPEED 2 TECH 1200V 1A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
1A,1200V |
20000 |
全新原装假一赔十 |
|||
INFINEON |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
15000 |
英飞凌MOS管、IGBT大量有货 |
|||
infineon |
20+/21+ |
SOT263 |
9500 |
全新原装公司现货 |
|||
Infineon/英飞凌 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
INFINEON |
23+ |
P-TO263-3-2 |
8600 |
全新原装现货 |
|||
I |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3-2 |
6000 |
原装现货正品 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
17574 |
||||
INFINEON |
08+(pbfree) |
P-TO263-3-2 |
8866 |
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IKB01N120H2规格书下载地址
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IKB01N120H2数据表相关新闻
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2021-1-2IHW30N160R2FKSA1
制造商零件编号IHW30N160R2FKSA1 ManufacturerOrOEMInfineonTechnologies 描述IGBT1600V60A312WTO247-3 说明IGBTNPT，沟槽型场截止1600V60A312W通孔PG-TO247-3 对无铅/(RoHS)规范的达标情况无铅/符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL）1（无限） 最低订购数量240 标准包装
2020-12-14
DdatasheetPDF页码索引
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