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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IKB01N120H2 | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode 文件：385.62 Kbytes Page：14 Pages | Infineon 英飞凌 |   | |
HighSpeed 2-Technology HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior | Infineon 英飞凌 | | ||
HighSpeed 2-Technology HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching | Infineon 英飞凌 | | ||
HighSpeed 2-Technology HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior | Infineon 英飞凌 | | ||
HighSpeed 2-Technology HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior | Infineon 英飞凌 | | ||
HighSpeed 2-Technology 文件：1.18644 Mbytes Page：12 Pages | Infineon 英飞凌 | |
IKB01N120H2产品属性
- 类型
描述
- 型号
IKB01N120H2
- 功能描述
IGBT 晶体管 HIGH SPEED 2 TECH 1200V 1A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
23+ |
65480 |
|||||
I |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
15000 |
英飞凌MOS管、IGBT大量有货 |
|||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
ADI/亚德诺 |
23+ |
SOT23-6 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
Infineon/英飞凌 |
24+ |
PG-TO263-3-2 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON |
23+ |
TO-220 |
7000 |
||||
INFINEON/英飞凌 |
24+ |
TO-263 |
3000 |
专营IR 英飞凌 支持含税 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
17574 |
||||
INFINEON |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
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制造商零件编号 IHW30N160R2FKSA1 Manufacturer Or OEM Infineon Technologies 描述 IGBT 1600V 60A 312W TO247-3 说明 IGBT NPT，沟槽型场截止 1600V 60A 312W 通孔 PG-TO247-3 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 240 标准包装
2020-12-14
DdatasheetPDF页码索引
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