位置：首页 > IC中文资料第916页 > IKA03N120H2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IKA03N120H2 | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel s | Infineon 英飞凌 |   | |
IKA03N120H2 | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode | Infineon 英飞凌 | | |
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 1200V 8.2A 29W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
HighSpeed 2-Technology • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga | Infineon 英飞凌 | | ||
HighSpeed 2-Technology HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior | Infineon 英飞凌 | | ||
HighSpeed 2-Technology HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior | Infineon 英飞凌 | | ||
HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight para | Infineon 英飞凌 | | ||
HighSpeed 2-Technology 文件：346.62 Kbytes Page：13 Pages | Infineon 英飞凌 | |
IKA03N120H2产品属性
- 类型
描述
- 型号
IKA03N120H2
- 功能描述
IGBT 晶体管 HIGH SPEED NPT TECH 1200V 3A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
3A,1200V |
20000 |
全新原装假一赔十 |
|||
INFINEON |
23+24 |
TO-220 |
49820 |
主营全系列二三极管、MOS场效应管、 |
|||
INFINEON/英飞凌 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
24+ |
TO-220F |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon/英飞凌 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
原装正品 |
23+ |
TO-220 |
17168 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
INFINEON |
25+ |
TO-220 |
6500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INF |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
15000 |
英飞凌MOS管、IGBT大量有货 |
|||
ADI |
23+ |
TO-220F |
7000 |
IKA03N120H2规格书下载地址
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制造商零件编号 IHW30N160R2FKSA1 Manufacturer Or OEM Infineon Technologies 描述 IGBT 1600V 60A 312W TO247-3 说明 IGBT NPT，沟槽型场截止 1600V 60A 312W 通孔 PG-TO247-3 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 240 标准包装
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DdatasheetPDF页码索引
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