位置：首页 > IC中文资料 > IIPW60R070P6
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IIPW60R070P6 | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤70mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | |
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤70mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
600V CoolMOS™ P6 Power Transistor MOSFET Metal Oxide Semiconductor Field Effect Transistor 600V CoolMOS™ P6 Power Transistor | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor 文件：1.29277 Mbytes Page：15 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
VFLGA-12221 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ST/意法半导体 |
24+ |
LGA-12 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法半导体 |
21+ |
LGA-12 |
8860 |
只做原装,质量保证 |
|||
ST |
24+ |
SMD |
17900 |
加速计 |
|||
IOR |
23+24 |
SIP |
9860 |
原厂原包装。终端BOM表可配单。可开13%增值税 |
|||
IR |
23+ |
DIP |
8000 |
只做原装现货 |
|||
IR |
23+ |
DIP |
7000 |
||||
ST(意法半导体) |
2447 |
LGA-12(2x2) |
115000 |
1个/圆盘一级代理专营品牌!原装正品,优势现货,长期 |
|||
ST |
2511 |
VFLGA-12221 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
IIPW60R070P6规格书下载地址
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制造商零件编号 IHW30N160R2FKSA1 Manufacturer Or OEM Infineon Technologies 描述 IGBT 1600V 60A 312W TO247-3 说明 IGBT NPT，沟槽型场截止 1600V 60A 312W 通孔 PG-TO247-3 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 240 标准包装
2020-12-14
DdatasheetPDF页码索引
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