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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IIPP65R280E6 | N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
650VCoolMOSE6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
650VCoolMOSE6PowerTransistor 文件：1.89068 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
ORIGINAL |
25800 |
原装正品,品质保证,值得你信赖. |
|||
ST(意法) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
ST/意法半导体 |
21+ |
LGA-12 |
12820 |
公司只做原装,诚信经营 |
|||
VISHAY |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
VISHAY/威世 |
21+ |
TO-252 |
30000 |
只做正品原装现货 |
|||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
ST |
22+ |
VFLGA-12221 |
16900 |
支持样品 原装现货 提供技术支持! |
|||
INFINEON |
23+ |
NA |
100 |
现货!就到京北通宇商城 |
|||
ST/意法半导体 |
2023+ |
LGA-12 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST/意法半导体 |
21+ |
LGA-12 |
6000 |
原装正品,假一赔十! |
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IIPP65R280E6规格书下载地址
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制造商零件编号IHW30N160R2FKSA1 ManufacturerOrOEMInfineonTechnologies 描述IGBT1600V60A312WTO247-3 说明IGBTNPT，沟槽型场截止1600V60A312W通孔PG-TO247-3 对无铅/(RoHS)规范的达标情况无铅/符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL）1（无限） 最低订购数量240 标准包装
2020-12-14
DdatasheetPDF页码索引
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