分立式IGBT

·Best-in-class V ce(sat) and V f for outstanding efficiency\n ·Lowest switching losses\n ·Stable temperature behavior\n ·Soft current turn-off waveforms\n ·High breakthrough voltage\n ·Resistance to current spikes over the SOA;

IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

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封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 30A 113W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Low Loss IGBT in Trench and Fieldstop Technology

Low Loss IGBT in TrenchStop® and Fieldstop technology • Approx. 1.0V reduced VCE(sat) compared to BUP313 • Short circuit withstand time – 10µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applicatio

LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D • Short circuit withstand time – 10µs • Designed for : - Frequency Converters - Uninterrupted Power

TrenchStop Series

文件：353.8 Kbytes Page：12 Pages

丝印代码：K15T120；TrenchStop Series

文件：369.68 Kbytes Page：15 Pages