型号 功能描述 生产厂家&企业 LOGO 操作
IGT60R190D1

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

Infineon

英飞凌

600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC standards

Infineon

英飞凌

包装:散装 描述:GAN HV 分立半导体产品 晶体管 - FET,MOSFET - 单个

Infineon

英飞凌

600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

Infineon

英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

Infineon

英飞凌

600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

Infineon

英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC Standards

Infineon

英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

Infineon

英飞凌

更新时间:2025-8-15 19:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon/英飞凌
24+
PG-HSOF-8-3
25000
原装正品,假一赔十!
Infineon/英飞凌
23+
PG-HSOF-8-3
25630
原装正品
Infineon/英飞凌
21+
PG-HSOF-8-3
6820
只做原装,质量保证
GEN
23+
TO-247
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
SANYO
24+
SMD
12860
新进库存/原装
Infineon/英飞凌
2021+
PG-HSOF-8-3
9600
原装现货,欢迎询价
Infineon(英飞凌)
24+
HSOF-8-3
9203
支持大陆交货,美金交易。原装现货库存。
SANYO
2023+
320W
5800
进口原装,现货热卖
Infineon/英飞凌
2023+
PG-HSOF-8-3
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供

IGT60R190D1数据表相关新闻