型号 功能描述 生产厂家 企业 LOGO 操作
IGT60R190D1

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

Infineon

英飞凌

IGT60R190D1

氮化镓 CoolGaN ™ 600V e-mode 功率晶体管 IGT60R190D1,实现极致效率和可靠性

Infineon

英飞凌

600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC standards

Infineon

英飞凌

包装:散装 描述:GAN HV 分立半导体产品 晶体管 - FET,MOSFET - 单个

Infineon

英飞凌

CoolGaN™600V 电子模式功率晶体管IGT60R190D1S具有极高的效率和可靠性

Infineon

英飞凌

600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

Infineon

英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

Infineon

英飞凌

600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

Infineon

英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC Standards

Infineon

英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

Infineon

英飞凌

更新时间:2025-11-17 18:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TE/泰科
2450+
DIP
9850
只做原厂原装正品现货或订货假一赔十!
Infineon/英飞凌
24+
PG-HSOF-8-3
25000
原装正品,假一赔十!
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon Technologies
21+
PG-HSOF-8-3
2000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
Infineon/英飞凌
21+
PG-HSOF-8-3
6820
只做原装,质量保证
SANYO
24+
SMD
12860
新进库存/原装
Infineon(英飞凌)
24+
HSOF-8-3
9203
支持大陆交货,美金交易。原装现货库存。
GE
05+
原厂原装
61
只做全新原装真实现货供应
Infineon/英飞凌
24+
PG-HSOF-8-3
6000
全新原装深圳仓库现货有单必成

IGT60R190D1数据表相关新闻