650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm

Silicon Carbide Schottky Diode

FEATURES ·Revolutionary semiconductor material - Silicon Carbide ·High surge current capability ·Optimized for high temperature operation ·Benchmark switching behavior ·No reverse recovery APPLICATIONS ·Solar inverter ·Power factor correction ·Switch mode power supply

650V SiC Schottky Diode

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