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IDW40G65C5价格
参考价格：￥84.9347
型号：IDW40G65C5 品牌：Infineon 备注：这里有IDW40G65C5多少钱，2025年最近7天走势，今日出价，今日竞价，IDW40G65C5批发/采购报价，IDW40G65C5行情走势销售排行榜，IDW40G65C5报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IDW40G65C5 | 650V SiC thinQ!??Generation 5 diodes Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of | Infineon 英飞凌 |   | |
IDW40G65C5 | SiC Silicon Carbide Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm | Infineon 英飞凌 | | |
IDW40G65C5 | 采用 real2pin 封装的 650 V 碳化硅肖特基二极管 | Infineon 英飞凌 | | |
Silicon Carbide Schottky Diode FEATURES ·Revolutionary semiconductor material - Silicon Carbide ·High surge current capability ·Optimized for high temperature operation ·Benchmark switching behavior ·No reverse recovery APPLICATIONS ·Solar inverter ·Power factor correction ·Switch mode power supply | ISC 无锡固电 | | ||
SiC Silicon Carbide Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm | Infineon 英飞凌 | | ||
SiC Silicon Carbide Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm | Infineon 英飞凌 | | ||
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. 文件：1.17656 Mbytes Page：11 Pages | Infineon 英飞凌 | | ||
650V SiC Schottky Diode 文件：707.15 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
CoolSiC™ Schottky Diode | Infineon 英飞凌 | | ||
650V SiC Schottky Diode 文件：707.15 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 650V 20A TO247-3 分立半导体产品 二极管 - 整流器 - 单 | Infineon 英飞凌 | | ||
封装/外壳：TO-247-3 包装：散装 描述：DIODE SCHOTTKY 650V 40A TO247-3 分立半导体产品 二极管 - 整流器 - 单 | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
865 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
24+ |
PG-TO247 |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
21+ |
TO247 |
1574 |
||||
Infineon(英飞凌) |
23+ |
TO-247-3 |
19850 |
原装正品,假一赔十 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
15+ |
PG-TO247 |
20 |
||||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
12700 |
买原装认准中赛美 |
|||
INFINEON |
22+ |
TO-247 |
5891 |
绝对真实库存 原装正品 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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IDW40G65C5数据表相关新闻
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SC250ER SC307NR SC616CPR SC616N-BTR SC616Q PK-20N38PQ SC628AHR SNP428 ZA016LDCT ZA028LACT ZT016LDSR9R ZT028LACTG ZT028LACTR15 ZT028LAFP1R ZT028LDCTB ZT028LDCTR30 TE082305-1 TE122001-7 P50011-1 IE092705-1
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IE122403-1 TP164009-2 P09070-1 MSO320R IP503012-1 IP125012-1 TE162005-2 TE082703-2 TE122401-4 TE102803-1 IE162312-2 IP233412-1 MSR516NJR IP412812-2 TP094003-1 TP244009-1 MSS5MMD IE220406-1 TE092703-6 MSS5MMX IE122305-2 MSS5MMP TE162006-1 TP103210-1 P35026-1
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2021-4-27IDW20G65C5B Infineon 肖特基二极管与整流器 SIC DIODES
INFINEON/英飞凌 IDW20G65C5B 深圳市佳杰伟业科技有限公司 大量现货
2020-11-17
DdatasheetPDF页码索引
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