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IDT72041

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the

IDT

SERIES CH CHIME STROBES

文件:34.48 Kbytes Page:2 Pages

HONEYWELL

霍尼韦尔

IDT72041产品属性

  • 类型

    描述

  • 型号

    IDT72041

  • 制造商

    Integrated Device Technology Inc

  • 功能描述

    74041L35JI

更新时间:2026-3-18 14:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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IDT
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NA
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IDT
25+
CDIP
9630
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IDT
23+
SOP18
10000
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IDT
25+
PLCC32L
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原装现货热卖中,提供一站式真芯服务
ADI
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6850
莱克讯每片来自原厂原盒原包装假一罚十价优
IDT
25+23+
New
33155
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IDT
25+
DIP
2700
全新原装自家现货优势!

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