位置：首页 > IC中文资料第4114页 > IDT71V65903S80BGI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V65903S80BGI | 256Kx36,512Kx183.3VSynchronousZBTSRAMs 文件：504.78 Kbytes Page：26 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V65903S80BGI产品属性
- 类型
描述
- 型号
IDT71V65903S80BGI
- 功能描述
IC SRAM 9MBIT 80NS 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
45
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 双端口，异步
- 存储容量
128K（8K x 16）
- 速度
15ns
- 接口
并联
- 电源电压
3 V ~ 3.6 V
- 工作温度
0°C ~ 70°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
70V25S15PF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
22+ |
119PBGA (14x22) |
9000 |
原厂渠道,现货配单 |
|||
IDT |
21+ |
119PBGA (14x22) |
13880 |
公司只售原装,支持实单 |
|||
IDT |
23+ |
119PBGA (14x22) |
9000 |
原装正品，支持实单 |
|||
IDT |
23+ |
119-PBGA(14x22) |
1389 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
23+ |
100TQFP |
9526 |
||||
IDT, Integrated Device Techno |
23+ |
100-TQFP14x14 |
7300 |
专注配单,只做原装进口现货 |
|||
IDT |
23+ |
165-FBGA |
6184 |
原装现货 |
|||
IDT |
1525+ |
QFP100 |
30000 |
绝对原装进口环保现货可开17%增值税发票 |
|||
IDT, Integrated Device Technol |
21+ |
100-TQFP(14x14) |
56200 |
一级代理/放心采购 |
|||
IDT, Integrated Device Techno |
23+ |
100-TQFP14x14 |
7300 |
专注配单,只做原装进口现货 |
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IDT71V65903S80BGI规格书下载地址
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DdatasheetPDF页码索引
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