位置：首页 > IC中文资料第4114页 > IDT71V65903S80BGI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V65903S80BGI | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 文件：504.78 Kbytes Page：26 Pages | IDT |   | |
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | |
IDT71V65903S80BGI产品属性
- 类型
描述
- 型号
IDT71V65903S80BGI
- 功能描述
IC SRAM 9MBIT 80NS 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
45
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 双端口，异步
- 存储容量
128K（8K x 16）
- 速度
15ns
- 接口
并联
- 电源电压
3 V ~ 3.6 V
- 工作温度
0°C ~ 70°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
70V25S15PF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
100TQFP |
9526 |
||||
IDT, Integrated Device Technol |
24+ |
100-TQFP(14x14) |
56200 |
一级代理/放心采购 |
|||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原厂渠道,现货配单 |
|||
IDT, Integrated Device Techno |
23+ |
100-TQFP14x14 |
7300 |
专注配单,只做原装进口现货 |
|||
Renesas |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
IDT |
23+ |
QFP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IDT |
23+ |
119-PBGA(14x22) |
1389 |
专业分销产品!原装正品!价格优势! |
|||
Renesas Electronics America In |
25+ |
100-LQFP |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IDT |
07+ |
QFP |
744 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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