型号 功能描述 生产厂家 企业 LOGO 操作
IDT71V65803S133PF

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

文件:496.4 Kbytes Page:26 Pages

IDT

IDT71V65803S133PF

封装/外壳:100-LQFP 包装:卷带(TR) 描述:IC SRAM 9MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:100-LQFP 包装:卷带(TR) 描述:IC SRAM 9MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

文件:496.4 Kbytes Page:26 Pages

IDT

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

IDT71V65803S133PF产品属性

  • 类型

    描述

  • 型号

    IDT71V65803S133PF

  • 功能描述

    IC SRAM 9MBIT 133MHZ 100TQFP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    576

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    闪存 - NAND

  • 存储容量

    512M(64M x 8)

  • 速度

    -

  • 接口

    并联

  • 电源电压

    2.7 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP(0.724,18.40mm 宽)

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

  • 其它名称

    497-5040

更新时间:2025-11-26 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
24+
TQFP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IDT
NEW
100TQFP
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IDT
23+
100-TQFP(14x14)
71890
专业分销产品!原装正品!价格优势!
IDT
25+
TQFP100
32360
IDT全新特价IDT71V65803S133PF即刻询购立享优惠#长期有货
IDT
23+
QFP-100
8560
受权代理!全新原装现货特价热卖!
IDT
原厂封装
9800
原装进口公司现货假一赔百
IDT/一定原
0233+
TQFP100
110
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IDT
2138+
QFP
8960
专营BGA,QFP原装现货,假一赔十
IDT
24+
QFP
303
IDT
22+
TQFP
5000
全新原装现货!自家库存!

IDT71V65803S133PF数据表相关新闻