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位置：首页 > IC中文资料第1065页 > IDT71V424S

型号 功能描述 生产厂家&企业 LOGO 操作
IDT71V424S

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S

3.3VCMOSStaticRAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S10PH

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S10PHG

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S10PHGI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S10PHI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S10Y

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S10YG

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S10YGI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S10YI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S12PH

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S12PHG

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S12PHGI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S12PHI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S12Y

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S12YG

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S12YGI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S12YI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S15PH

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S15PHG

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S15PHGI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S15PHI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S15Y

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S15YG

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S15YGI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S15YI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S20Y

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V424S10PH8

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
IDT71V424S10PHI

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
IDT71V424L

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V424

3.3VCMOSStaticRAM4Meg(512Kx8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V424L

3.3VCMOSStaticRAM4Meg(512Kx8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V424S

3.3VCMOSStaticRAM4Meg(512Kx8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V424S产品属性

  • 类型

    描述

  • 型号

    IDT71V424S

  • 功能描述

    IC SRAM 4MBIT 10NS 44TSOP

  • RoHS

    否

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    576

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    闪存 - NAND

  • 存储容量

    512M（64M x 8）

  • 速度

    -

  • 接口

    并联

  • 电源电压

    2.7 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP（0.724，18.40mm 宽）

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

  • 其它名称

    497-5040

IDT71V424S供应商更多...

更新时间：2024-6-21 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
上海意淼电子科技有限公司
IDT71V424S15Y
IDT
23+
SOJ36
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
IDT71V424S15PHG
IDT
2020+
TSOP44
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市深创辉科技有限公司
IDT71V424S15PHG
IDT
6月3日
49
原装正品长期供货，如假包赔包换 徐小姐13714450367
询价
深圳市明嘉莱科技有限公司
IDT71V424S12PH
IDT
24+
TSOP44
880000
明嘉莱只做原装正品现货
询价
深圳市华睿芯科技有限公司
IDT71V424S12YG
IDT
23+
SOJ
20000
原厂原装正品现货
询价
深圳市博浩通科技有限公司
IDT71V424S15YGI
IDT
23+
36-SOJ
7750
全新原装优势
询价
深圳市威雅利发展有限公司
IDT71V424S15PHI
IDT
0142+
TSOP44
3614
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市凌旭科技有限公司
IDT71V424S10Y
IDT
2016+
SOJ36
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市艾宇特电子科技有限公司
IDT71V424S12Y
IDT
2046+
9852
只做原装正品现货!或订货假一赔十!
询价
深圳市蓝山航业科技有限公司
IDT71V424S10YG
idt
22+
500000
行业低价,代理渠道
询价

IDT71V424S芯片相关品牌

  • API
  • APITECH
  • BOARDCOM
  • crydom
  • Hitachi
  • IDT
  • LUGUANG
  • MOLEX4
  • NEC
  • POWEREX
  • SILABS
  • SUPERWORLD

IDT71V424S规格书下载地址

IDT71V424S参数引脚图相关

IDT71V424S数据表相关新闻

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