型号 功能描述 生产厂家&企业 LOGO 操作
IDT71V124SA12TYI

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Description The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

IDT

IDT71V124SA12TYI

封装/外壳:32-BSOJ(0.300",7.62mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:32-BSOJ(0.300",7.62mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

ETC

知名厂家

3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible

RENESAS

瑞萨

3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible

RENESAS

瑞萨

3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible

RENESAS

瑞萨

3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible

RENESAS

瑞萨

3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible

RENESAS

瑞萨

IDT71V124SA12TYI产品属性

  • 类型

    描述

  • 型号

    IDT71V124SA12TYI

  • 功能描述

    IC SRAM 1MBIT 12NS 32SOJ

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 产品变化通告

    Product Discontinuation 05/Nov/2008

  • 标准包装

    84

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步 ZBT

  • 存储容量

    4.5M(128K x 36)

  • 速度

    75ns

  • 接口

    并联

  • 电源电压

    3.135 V ~ 3.465 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    119-BGA

  • 供应商设备封装

    119-PBGA(14x22)

  • 包装

    托盘

  • 其它名称

    71V3557SA75BGI

更新时间:2025-8-14 12:59:00
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一级代理专营品牌!原装正品,优势现货,长期排单到货

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