位置：首页 > IC中文资料第905页 > IDT71V124SA12PH
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V124SA12PH | 3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
IDT71V124SA12PH | 封装/外壳：32-SOIC（0.400"，10.16mm 宽） 包装：管件 描述：IC SRAM 1MBIT PARALLEL 32TSOP II 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
封装/外壳：32-SOIC（0.400"，10.16mm 宽） 包装：管件 描述：IC SRAM 1MBIT PARALLEL 32TSOP II 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V124SA12PH产品属性
- 类型
描述
- 型号
IDT71V124SA12PH
- 功能描述
IC SRAM 1MBIT 12NS 32TSOP
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 产品变化通告
Product Discontinuation 05/Nov/2008
- 标准包装
84
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步 ZBT
- 存储容量
4.5M（128K x 36）
- 速度
75ns
- 接口
并联
- 电源电压
3.135 V ~ 3.465 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
119-BGA
- 供应商设备封装
119-PBGA（14x22）
- 包装
托盘
- 其它名称
71V3557SA75BGI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
2022 |
TSOP32 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
IDT |
24+23+ |
TSSOP |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
|||
IDT |
23+ |
TSOP |
1047 |
优势库存 |
|||
idt |
dc00 |
原厂封装 |
2527 |
INSTOCK:1/tr/smd |
|||
IDT |
22+ |
SOP |
4500 |
全新原装品牌专营 |
|||
IDT |
2320+ |
TSOP32 |
562000 |
16年只做原装原标渠道现货终端BOM表可配单提供样品 |
|||
IDT |
23+ |
NA/ |
1192 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IDT |
2020+ |
O-NEWT |
1500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IDT |
23+ |
32PINTSOPTYP |
9526 |
||||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
IDT71V124SA12PH芯片相关品牌
IDT71V124SA12PH规格书下载地址
IDT71V124SA12PH参数引脚图相关
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