封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 44SOJ 集成电路（IC） 存储器

IC SRAM 1M PARALLEL 44SOJ

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Description The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with inno vative circuit design techniques, provides a cost-effective solution for

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Description The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with inno vative circuit design techniques, provides a cost-effective solution for

封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：管件 描述：IC SRAM 1MBIT PARALLEL 44SOJ 集成电路（IC） 存储器

IC SRAM 1M PARALLEL 44SOJ

IC SRAM 1M PARALLEL 44SOJ

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

3.3V CMOS Static RAM

文件：116.03 Kbytes Page：9 Pages

3.3V CMOS Static RAM

文件：116.03 Kbytes Page：9 Pages