5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

1200 V Silicon Carbide Schottky diode in D²PAK real 2-pin package

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：SIC DISCRETE 分立半导体产品 二极管 - 整流器 - 单

5th Generation CoolSiCTM 1200V Schottky Diode

Features  No reverse recovery current / no forward recovery  High surge current capability  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Specified dv/dt ruggedness  Pb-free lead plating; RoHS

Silicon Carbide Schottky Diode

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Revolutionary semiconductor material - Silicon Carbide

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