650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

Silicon Carbide Schottky Diode

FEATURES · High surge current capability · No reverse recovery/ No forward recovery · Benchmark switching behavior APPLICATIONS · Solar inverter · Power factor correction · Switch mode power supply · Uninterruptible power supply

Silicon Carbide Diode

文件：1.16163 Mbytes Page：11 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE SCHOTTKY 650V 4A TO263-2 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 650V 4A TO263-2 分立半导体产品 二极管 - 整流器 - 单

650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

Silicon Carbide Diode

文件：727.63 Kbytes Page：11 Pages